Measurement And Excited State Prediction Of Photoexcited Electron And Hole Dynamics In Znte With Transient Ultraviolet Reflection Spectroscopy

Liu, Hanzhe

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https://hdl.handle.net/2142/111410 Copy

Description

Title

Measurement And Excited State Prediction Of Photoexcited Electron And Hole Dynamics In Znte With Transient Ultraviolet Reflection Spectroscopy

Author(s)

Liu, Hanzhe

Contributor(s)

• Cushing, Scott Kevin
• Klein, Isabel M
• Michelsen, Jonathan M

Issue Date

2021-06-24

Keyword(s)

Dynamics and kinetics

Abstract

Transient extreme ultraviolet (XUV) spectroscopy is becoming well developed for the study of transition metal oxides like those used in solar fuel generation. Si and Ge compounds, other popular solar energy semiconductors, have been used as test cases for the ab-initio prediction of XUV edges and their photoexcited change. Here, we use transient XUV spectroscopy to study the ultrafast carrier dynamics of ZnTe, both as a CO$_{2}$ reduction material of interest to the LiSA (Liquid Sunlight Alliance) initiative as well as a test of our group’s ab-initio methods. XUV spectra were taken in a grazing reflection geometry to enhance the sensitivity to carrier dynamics at the ZnTe surface. The Te 4d core-to-valence transition is then measured after broad and narrow band excitation replicating solar or UV light, respectively. Electron and hole energies are observed as a function of time by state-filling effects. A fast electronic response is observed within the ZnTe bandgap and is compared to theoretical signatures of photoexcited renormalization or surface states.

Publisher

International Symposium on Molecular Spectroscopy

Type of Resource

Text

Language

eng

Permalink

http://hdl.handle.net/2142/111410

DOI

10.15278/isms.2021.RJ09

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