Development of InP DHBT for 5G millimeter-wave power amplifier and GaAs photodetector for 50 Gb/s optical link
Peng, Yu-Ting
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https://hdl.handle.net/2142/113135
Description
Title
Development of InP DHBT for 5G millimeter-wave power amplifier and GaAs photodetector for 50 Gb/s optical link
Author(s)
Peng, Yu-Ting
Issue Date
2021-07-01
Director of Research (if dissertation) or Advisor (if thesis)
Feng, Milton
Doctoral Committee Chair(s)
Feng, Milton
Committee Member(s)
Dallesasse, John M
Jin, Jianming
Dragic, Peter D
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Type-II InP, power amplifier, millimeter-wave, 5G, photodetector, high speed optical link
Abstract
The high-speed optical transceivers require high-speed photodetector to be paired with high-speed vertical-cavity surface-emitting lasers (VCSELs) for short-range transmission at 850 nm. High-speed photodetector holds the key to higher data rate and lower energy consumption, which can help resolve the rising data traffic with high power efficiency. As for wireless communication, Indium phosphide (InP) heterojunction bipolar transistors (HBTs) are widely deployed in high-speed mixed signaling and radio-frequency (RF) instruments because of their outstanding ability to amplify the signals at high-speed bandwidth. Moreover, inherent material properties of InP such as high durability of the breakdown field and fast electron drift velocity make this material one of the suitable candidates when it comes to power amplifier applications within millimeter-wave spectrums. In this work, the development of the 50 Gb/s P-i-N photodetector Type-II InP DHBT for 5G power amplifier application will be presented and discussed. The development work of the photodetector includes the design consideration and process optimization, the dark current and bandwidth characterization of the fabricated device, followed by the impulse response measurement and microwave modeling. The development of Type-II InP DHBT consists of the review of the previous InP DHBT works at UIUC, plasma-enhanced InP dry-etching process development, DC and small-signal characterization, physical parameter extraction and ADS microwave modeling.
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