Modeling and optimization of the transistor laser operation

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https://hdl.handle.net/2142/113107

Title: Modeling and optimization of the transistor laser operation
Author(s): Wu, Bohao
Issue Date: 2021-07-23
Director of Research (if dissertation) or Advisor (if thesis): Leburton, Jean-Pierre
Department of Study: Electrical & Computer Eng
Discipline: Electrical & Computer Engr
Degree Granting Institution: University of Illinois at Urbana-Champaign
Degree Name: M.S.
Degree Level: Thesis
Date of Ingest: 2022-01-12T21:47:04Z
Keyword(s): Transistor laser, turn-off mechanism
Abstract: This thesis describes theoretically the operation of the Transistor Lasers (TLs) from two perspectives. First, the charge control model is introduced to provide the electron characteristics in the base of the TLs. The model shows that the quantum wells (QWs) serve as electron traps to reduce the electrical gain and produce an optical gain. Based on the analysis on the charge control model, the optical gain can be modulated by the cladding structure of the base. Second, the radiative recombination is analyzed from the first principles. The results indicate that the radiative recombination saturates in degenerately doped cases, where Auger recombination becomes dominant and deteriorates the quantum efficiency. Finally, this thesis proposes a novel turn-off mechanism for the TLs, which achieves good efficiency and fast response at the same time.
Graduation Semester: 2021-08
Type of Resource: Thesis
Permalink: http://hdl.handle.net/2142/113107