University of Illinois Urbana-Champaign

Performance of an ESD device model under normal operating conditions

Lee, Seunghyun

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https://hdl.handle.net/2142/107272

Description

Title
Performance of an ESD device model under normal operating conditions
Author(s)
Lee, Seunghyun
Contributor(s)
Rosenbaum, Elyse
Issue Date
2020-05
Keyword(s)
  • circuit simulation
  • electrostatic discharge (ESD)
  • MOSFET model
Abstract
This work examines an augmented SPICE model of MOS transistor with extra elements which are referred as a wrapper model. The addition of the wrapper model to the SPICE model extends the validity of the MOSFET model to high current (ESD), breakdown region. After calibrating the whole model to accurately simulate a MOSFET in ESD conditions, this work further evaluates the augmented model by testing it under normal operating conditions: DC, transient, and AC. The goal of this work is to investigate the effect of adding the wrapper model on CMOS circuit simulation. This work presents how an optimized wrapper model can minimize the simulation error under normal operating conditions. By comparing the simulation results between the original MOSFET model and the augmented model, this work examines the possibility of using one unified general model which is applicable in both normal operating and ESD situations.
Type of Resource
text
Language
en
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http://hdl.handle.net/2142/107272

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