Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy

Choi, Wonsik

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https://hdl.handle.net/2142/106487 Copy

Description

Title

Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy

Author(s)

Choi, Wonsik

Issue Date

2019-12-05

Director of Research (if dissertation) or Advisor (if thesis)

Li, Xiuling

Doctoral Committee Chair(s)

Li, Xiuling

Committee Member(s)

• Lyding, Joseph W
• Lee, Minjoo L
• Nam, Sungwoo

Department of Study

Electrical & Computer Eng

Discipline

Electrical & Computer Engr

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

• semiconductor nanowire
• selective lateral epitaxy
• selective area epitaxy
• sMIM
• IR-sSNOM

Abstract

Bottom-up grown III-V compound semiconductor nanowires (NWs) provide a novel building block for electrical and optical devices. Bottom-up III-V NWs can be synthesized by either a vapor-liquid-solid (VLS) or selective area epitaxy (SAE) mechanism. Under the specific VLS NW growth conditions, planar self-aligned NWs can be grown on top of a substrate under a selective lateral epitaxy (SLE) mechanism. In this thesis research, first, the realization of lateral multiple p-n junction gallium arsenide (GaAs) SLE NW grown by metal-organic chemical vapor deposition (MOCVD) reactor is presented. Scanning microwave impedance microscopy (sMIM) and infrared scattering-type near-field optical microscopy (IR-SNOM) scans on top of the NW suggested that p-type zinc dopants are accumulated at twin-plane boundaries of NW. The electrical properties of the SLE GaAs lateral p-n junction were analyzed by measuring two-terminal I-V characteristics of arrays of p-n NW diodes. The I-V characteristics of the devices indicated that the lateral p-n junction was successfully realized with a high rectification ratio of ~106. The gallium phosphide (GaP) SAE NW growth on top of a silicon (Si) substrate will be also introduced. Systemic studies were performed by modulating the following three NW growth conditions: TMGa flow rate, growth temperature, and V/III ratio. By controlling the NW growth parameters, a 97.5% yield of hexagonal NWs was grown on an area of 400 µm × 400 µm. The morphology of the NWs was inspected with a scanning electron microscope (SEM). X-ray diffraction (XRD) analysis was performed on the GaP NWs, and 6.3016 Å of wurtzite (WZ) GaP c-lattice parameter was extracted. Vertical arrays of GaP p-n and p-i-n NW diodes were fabricated. The ideality factor and rectification ratio of p-n GaP NW diode were measured 7 and 10, respectively. The ideality factor and the rectification ratio could be improved to 3.7 and 1000 by introducing an undoped intrinsic layer between n-type and p-type GaP NW.

Graduation Semester

2019-12

Type of Resource

text

Permalink

http://hdl.handle.net/2142/106487

Copyright and License Information

"Chapter 2 was reproduced with the permission from [W. Choi et al., ""Direct electrical probing of periodic modulation of zinc-dopant distributions in planar gallium arsenide nanowires,"" ACS Nano, vol. 11, no. 2, pp. 1530-1539, 2017.] Copyright [2017] American Chemical Society."

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