A double gate metal-oxide-semiconductor structure for modulation of the hyperfine interaction in phosphorus-doped Si-device

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https://hdl.handle.net/2142/105527

Title: A double gate metal-oxide-semiconductor structure for modulation of the hyperfine interaction in phosphorus-doped Si-device
Author(s): Tehranchi, Farzad
Issue Date: 2006-11-30
Director of Research (if dissertation) or Advisor (if thesis): Leburton, J.P.
Department of Study: Electrical & Computer Engineering
Degree Granting Institution: University of Illinois at Urbana-Champaign
Degree Name: M.S. (master's)
Degree Level: Thesis
Keyword(s): Electrical and computer engineering
Language: en
Abstract: In this thesis, we investigate the control of the hyperfine interaction between a conduction electron and a P-impurity nuclear spin in a symmetric metal-oxide semiconductor structure with face-to-face gate oxide layers. We solve the Poisson equation for the device electronics and the Schrodinger equation for the quantum states in the Si - layer by taking into account the nonisotropic effective mass of silicon at each of the six degenerate minima in the conduction band. It is shown that the double gate device leads to better performance, in terms of higher wave function amplitude modulation and consequently higher nuclear magnetic resonance frequency compared to single gate devices for relatively short impurity distances from the oxide layers.
Type of Resource: text
Permalink: http://hdl.handle.net/2142/105527

Dissertations and Theses in Electrical and Computer Engineering