University of Illinois Urbana-Champaign

Luminescence of phosphide-based emitters after annealing

Moog, Emily

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https://hdl.handle.net/2142/104062

Description

Title
Luminescence of phosphide-based emitters after annealing
Author(s)
Moog, Emily
Contributor(s)
Lee, Minjoo Lawrence
Issue Date
2019-05
Keyword(s)
  • semiconductor quantum dots
  • phosphide compounds
  • rapid thermal annealing
  • semiconductor annealing
  • semiconductor quantum well
  • III-V semiconductors
Abstract
The luminescence characteristics of an AlGaInP double heterostructure, InGaP quantum well (QW), and InP quantum dots (QDs) grown using MBE on GaAs and Si are investigated. We also investigate the effects of annealing on these structures. Rapid thermal annealing (RTA) improves the luminescent intensity of all three structures on GaAs. It also improves luminescent intensity for QWs and QDs on Si. For both substrates, the largest improvement is in the QDs. We explore both moderate and high temperature ranges for QD RTA. For the QD samples on GaAs, moderate temperature RTA results in high intensity improvements without significant changes in emission wavelength; in high temperature RTA, we observe even larger intensity improvements and significant blueshift. Also for the QDs on GaAs, furnace annealing results in large intensity increases without blueshift, or more moderate increases with blueshift, depending on temperature. For the QDs on Si, both moderate and aggressive RTA temperatures result in modest intensity increases, significantly less than that observed for the same structures on GaAs; more aggressive RTA results in blueshifting. Both temperature ranges, on both Si and GaAs, lead to high radiative recombination for both annealing methods used.
Type of Resource
text
Language
en
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http://hdl.handle.net/2142/104062

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