Diffusion and Electrical Properties of Sulfur Implanted in Gallium Arsenide

Chan, Siu Sing

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https://hdl.handle.net/2142/103652 Copy

Description

Title

Diffusion and Electrical Properties of Sulfur Implanted in Gallium Arsenide

Author(s)

Chan, Siu Sing

Issue Date

1983-07

Keyword(s)

• Semicoductors
• Dual implantations
• Donors
• Sulfur doping
• Impurity interactions
• Defects

Publisher

Coordinated Science Laboratory, University of Illinois at Urbana-Champaign

Series/Report Name or Number

Coordinated Science Laboratory Report no. UILU-ENG 83-2213, R-992

Type of Resource

text

Language

en

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http://hdl.handle.net/2142/103652

Sponsor(s)/Grant Number(s)

Joint Services Electronics Program; Office of Naval Research / N00014-79-C-0424; N00014-76-C-0806

Owning Collections