University of Illinois Urbana-Champaign

Microwave characterization of vertical cavity surface emitting diode laser and transistor laser

Wang, Curtis Yilin

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WANG-DISSERTATION-2018.pdf

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https://hdl.handle.net/2142/102783

Description

Title
Microwave characterization of vertical cavity surface emitting diode laser and transistor laser
Author(s)
Wang, Curtis Yilin
Issue Date
2018-10-08
Director of Research (if dissertation) or Advisor (if thesis)
Feng, Milton
Doctoral Committee Chair(s)
Feng, Milton
Committee Member(s)
  • Jin, Jianming
  • Dallesasse, John M.
  • Dragic, Peter
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Date of Ingest
2019-02-07T20:35:53Z
Keyword(s)
Semiconductor Laser, Transistor Laser, optical interconnect
Abstract
Semiconductor lasers are widely deployed in optical transceivers for optical fiber based short-reach (< 100m) data links. With increasingly growing data traffic worldwide in data centers, developments of faster optical transceivers, hence high-speed semiconductor lasers, are highly demanded. The vertical cavity surface-emitting laser (VCSEL) is the most commercially popular choice. With high reflectivity DBR mirrors and oxide-confinement for emission mode control and leakage current reduction, VCSELs are able to achieve a low laser threshold and high modulation bandwidth. Currently in published research results, the highest data transmission rate demonstrated for an 850 nm VCSEL is 57 Gb/s error-free at 25 °C and 50 Gb/s error-free at 85 °C. Nevertheless, the bandwidth and data transmission performance of diode lasers, such as VCSELs, are fundamentally limited by the slow spontaneous recombination lifetime. Therefore, a new kind of semiconductor laser, the transistor laser (TL), is proposed to break the bandwidth bottleneck as the dynamic carrier transport in the base of a TL drastically reduces the spontaneous recombination lifetime. Ultimately to reach low threshold and high energy per bit efficiency, the first oxide-confined vertical cavity transistor laser (VCTL) is realized with a trench oxidation process and a lateral-feeding base metal design. To further reduce the excessive emitter series resistance, a VCTL with partially etched mesa is developed and fabricated. The tunneling modulation aspect and possible application of the TL is also explored in this dissertation.
Graduation Semester
2018-12
Type of Resource
text
Permalink
http://hdl.handle.net/2142/102783
Copyright and License Information
Copyright 2018 Curtis Wang

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