High resolution laser spectroscopy of the jet-cooled SiCF free radical
Rothschopf, Gretchen K.
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https://hdl.handle.net/2142/100548
Description
Title
High resolution laser spectroscopy of the jet-cooled SiCF free radical
Author(s)
Rothschopf, Gretchen K.
Contributor(s)
Clouthier, Dennis
Smith, Tony
Issue Date
2018-06-20
Keyword(s)
Radicals
Abstract
The SiCF radical was produced in an electric discharge through a dilute mixture of trimethyl(trifluoromethyl)slilane (CH3)3SiCF3 in high-pressure argon. Using our high-resolution pulse amplified ring dye laser system, the laser induced fluorescence of the 0-0 band of the A˜ 2Σ +- X˜ 2Πi transition has been rotationally resolved (linewidths 0.015 cm−1 ) for the first time. The subsequent rotational analysis paired with previous ab initio calculationsa allowed the determination of the ground and excited state SiC bond lengths. We find a Si-C double bond in the ground state and an unusual Si-C triple bond in the excited state. Finally, further low-resolution spectra were obtained to determine better values for the excited state vibrational frequencies.
aC. J. Evans and D. J. Clouthier, J. Chem. Phys., 117, 6439-6445 (2002)
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