Three-dimensional (3D) electronics by compressive buckling process
Kim, Jae Hwan
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https://hdl.handle.net/2142/101307
Description
Title
Three-dimensional (3D) electronics by compressive buckling process
Author(s)
Kim, Jae Hwan
Issue Date
2018-04-15
Director of Research (if dissertation) or Advisor (if thesis)
Rogers, John A.
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
Three-dimensional electronics, Compressive buckling, Transfer printing
Abstract
A compressive force from releasing a pre-stretched elastomer substrate such as PDMS, Ecoflex, and Dragon Skin induces a 2D precursor to realize a sophisticated 3D electronic structure of a resistor, capacitor and transistor. Conventional microfabrication methods create 3D electronic components, and the electronic properties of the components are the same as those of conventional devices. 3D constant and variable resistors, capacitors, and transistors are fabricated and investigated before and after the compressive buckling process. Highly phosphorus doped silicon nanomembranes from a silicon-on-insulator wafer are transfer-printed onto the 3D structures and introduce changes of the electrical properties under compressive strain. A commercial chip from X-FAB Semiconductor Foundries is successfully placed onto a 2D precursor and formed into a 3D structure by the buckling method. With no limit or constraint on 3D structures, new advantages previously unintroduced from 2D electronic devices would be obtained from this new technique of compressive buckling process.
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