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https://hdl.handle.net/2142/99996
Description
Title
Gallium nitride based Schottky barrier diodes
Author(s)
Kelly, Frank
Contributor(s)
Kim, Kyekyoon
Issue Date
2018-05
Keyword(s)
GaN
power electronics
PAMBE
device processing
Abstract
This work seeks to explore devices integral to the next generation of power electronics. To do this,
gallium nitride (GaN) based Schottky barrier diodes (SBDs) are fabricated, tested, and characterized. The
following is a discussion of the GaN thin film growth system and processing methods necessary to
produce working devices. GaN films are grown via plasma assisted molecular beam epitaxy (PAMBE)
which are then patterned via photolithography and etching. For this, a photomask set was designed and
made. Plasma enhanced chemical vapor deposition (PECVD), metal evaporation, rapid thermal
annealing (RTA) and additional patterning steps are used to create contacts. Films are tested for
crystalline quality and composition/doping levels. Devices are then tested for CV and IV characteristics
from which different device parameters are determined.
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