University of Illinois Urbana-Champaign

Laser spectroscopy of the jet-cooled SiCF free radical

Smith, Tony

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854376.pptx

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https://hdl.handle.net/2142/97163

Description

Title
Laser spectroscopy of the jet-cooled SiCF free radical
Author(s)
Smith, Tony
Contributor(s)
Clouthier, Dennis
Issue Date
2017-06-22
Keyword(s)
Radicals
Date of Ingest
  • 2017-07-27T20:15:54Z
  • 2018-01-29T23:06:01Z
Abstract
The SiCF free radical has been detected through the A$^{2}$$Sigma$$^{+}$-X$^{2}$$Pi$ band system in the 605 - 550 nm region. The radical was produced in an electric discharge through a dilute mixture of CF$_{3}$SiH$_{3}$ in high pressure argon and studied by laser induced fluorescence. The vibronic levels of the ground and excited states have been measured through LIF and emission spectroscopy and a Renner-Teller analysis has been undertaken for the ground $^{2}$$Pi$ levels. The observed vibrational frequencies, partially resolved rotational band contours, Renner-Teller parameter, and electronic excitation energy are in accord with our predictions from high level ab initio (CCSD(T)/aug-cc-pVTZ) calculations. Theory shows that the radical has a silicon-carbon double bond in the ground state and a much shorter triple bond in the excited state. This is the third in the series of SiCX (X = H, Cl, and F) free radicals we have produced and studied in the gas phase.
Publisher
International Symposium on Molecular Spectroscopy
Type of Resource
text
Genre of Resource
Conference Paper / Presentation
Language
eng
Permalink
http://hdl.handle.net/2142/97163
DOI
https://doi.org/10.15278/isms.2017.RJ12
Copyright and License Information
Copyright 2017 Tony Smith

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Abstracts & Presentations - 2017 International Symposium on Molecular Spectroscopy PRIMARY