Thin-film GaN HEMTs for flexible electronics

Perozek, Josh

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https://hdl.handle.net/2142/97881 Copy

Description

Title

Thin-film GaN HEMTs for flexible electronics

Author(s)

Perozek, Josh

Contributor(s)

Bayram, Can

Issue Date

2017-12

Keyword(s)

• GaN
• high electron mobility transistors
• flexible electronics

Abstract

As the demand for faster, more efficient, and more robust electronics continues to grow, new materials beyond silicon need to be explored. In the field of power electronics, gallium nitride (GaN) is a strong candidate for next-generation devices due to its wide bandgap (3.4 eV), high electron mobility (>1500 cm2/V-s), and large electron sheet concentration (1013 cm-2). These properties enable high-performance devices that are mechanically and electrically stable in harsh conditions such as high temperatures or extreme bending. Due to the prohibitive cost of free-standing GaN, GaN wafers are typically created through epitaxial growth on sapphire, silicon carbide, or Si (111) substrates; through substrate removal processes, the <5 μm thick GaN layers enable new thin-film technologies such as flexile electronics. In this project, we develop a wet etching based low-cost substrate removal process for GaN on Si (111) and characterize the structural and electrical properties of the material before and after substrate removal as well as at various bending conditions.

Type of Resource

text

Language

en

Permalink

http://hdl.handle.net/2142/97881

Sponsor(s)/Grant Number(s)

AFOSR Young Investigator Program Grant/FA9550-16-1-0224

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