Photoluminescent Properties of GaAs1-xPx Implanted with Nitrogen and Neon

Anderson, Richard Ernest

Permalink

https://hdl.handle.net/2142/75546 Copy

Description

Title

Photoluminescent Properties of GaAs1-xPx Implanted with Nitrogen and Neon

Author(s)

Anderson, Richard Ernest

Issue Date

1974-08

Keyword(s)

• Photoluminescence
• Implantation
• Gallium arsenide phosphide

Publisher

Coordinated Science Laboratory, University of Illinois at Urbana-Champaign

Series/Report Name or Number

Coordinated Science Laboratory Report no. UILU-ENG 74-2226, R-660

Type of Resource

text

Language

English

Permalink

http://hdl.handle.net/2142/75546

Sponsor(s)/Grant Number(s)

Joint Services Electronics Program / DAAB-07-72-C-0259

Owning Collections