Experimental Investigation of Hot Electron and Related Effects in Gallium (Aluminum) Arsenide Devices
Higman, Ted King
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https://hdl.handle.net/2142/75749
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Title Experimental Investigation of Hot Electron and Related Effects in Gallium (Aluminum) Arsenide Devices Author(s) Higman, Ted King Issue Date 1989-01 Keyword(s) Advance of crystal growth technology Metalorganic chemical vapor deposition (MOCVD) Heterojunction devices Physical properties of semiconductor heterojunction devices Resonant tunneling Ballistic transport Hot electron effects Publisher Coordinated Science Laboratory, University of Illinois at Urbana-Champaign Series/Report Name or Number Coordinated Science Laboratory Report no. UILU-ENG-89-2209 Type of Resource text Language English Permalink http://hdl.handle.net/2142/75749 Sponsor(s)/Grant Number(s) Joint Services Electronics Program / N00014-84-C-0149 National Science Foundation Engineering Research Center for Compound Semiconductor Microelectronics / CDR 85-22666 Department of Defense University Research Instrumentation Program / N00014-84-G-0157
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