Studies of Electron Traps in Gallium Arsenide and Gallium Arsenide Phosphide by Deep Level Transient Spectroscopy

Day, Ding-Yuan Samuel

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https://hdl.handle.net/2142/75652 Copy

Description

Title

Studies of Electron Traps in Gallium Arsenide and Gallium Arsenide Phosphide by Deep Level Transient Spectroscopy

Author(s)

Day, Ding-Yuan Samuel

Issue Date

1980-03

Keyword(s)

• DLTS
• Semiconductors
• Defects

Publisher

Coordinated Science Laboratory, University of Illinois at Urbana-Champaign

Series/Report Name or Number

Coordinated Science Laboratory Report no. UILU-ENG 80-2209, R-877

Type of Resource

text

Language

English

Permalink

http://hdl.handle.net/2142/75652

Sponsor(s)/Grant Number(s)

• Joint Services Electronics Program / N00014-79-C-0424
• Office of Naval Research / N00014-76-C-0806

Owning Collections