ELECTRICAL CHARACTERIZATION OF HIGH PERFORMANCE (001) β-Ga2O3 MOSCAP BY INVERSE METAL ASSISTED CHEMICAL ETCHING
Jiang, Bill
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https://hdl.handle.net/2142/124886
Description
Title
ELECTRICAL CHARACTERIZATION OF HIGH PERFORMANCE (001) β-Ga2O3 MOSCAP BY INVERSE METAL ASSISTED CHEMICAL ETCHING
Author(s)
Jiang, Bill
Issue Date
2022-05-01
Keyword(s)
β-Ga2O3, wide bandgap, metal assisted chemical etching, MOSCAP, Dit, C-V Measurement
Abstract
β-Gallium Oxide (β-Ga2O3), with a bandgap of 4.6 - 4.7 eV, is a promising ultra-wide bandgap material for high-power applications in next generation power electronics. Scaling and performance requirements demand novel fabrication methods. In this work, we demonstrate the method and electrical performance of a Metal-Oxide-Semiconductor capacitor structure (MOSCAP) fabricated on a (001) β-Ga2O3 using metal assisted chemical etching (MacEtch). This project will involve using a suitable light source and a combination of metal catalysts with proper oxidants to etch this material, producing 3D structures defined by our patterns. Then, the capacitance−voltage (C-V) characteristics of the etched surface is observed, and interface trap density extracted using photo assisted C-V measurements. The result is then compared to an unetched planar β-Ga2O3 surface.
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