HYDROGEN-TERMINATED DIAMOND MOSFETS FOR POWER ELECTRONICS

Sumant, Alkesh

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https://hdl.handle.net/2142/124871 Copy

Description

Title

HYDROGEN-TERMINATED DIAMOND MOSFETS FOR POWER ELECTRONICS

Author(s)

Sumant, Alkesh

Issue Date

2022-05-01

Keyword(s)

diamond; power electronics; RF electronics.

Abstract

Diamond for device-based applications has been a subject of great interest, due to its wide bandgap (5.47 eV), high thermal conductivity (22 W cm-1 K-1), breakdown electric field (>10 MV/cm), carrier mobility (4500 cm2 V-1 s-1 (e), 3800 cm2 V-1 s-1 (h)), and saturation velocity (1.5 cm/s (e), 1.05 cm/s (h)) [1]. These properties allow diamond-based devices to operate at much higher frequencies without experiencing heavy thermal stress compared to silicon-based devices and make them an ideal candidate for high-power RF applications. In this thesis, hydrogenated diamond is studied for use as a p-type conducting channel for FET applications. Hydrogenated polycrystalline and ultra-nanocrystalline diamond samples were structurally and electrically characterized to determine the effect of grain boundaries and surface roughness on subsurface conduction. The change in hydrogenation was studied over time by periodically measuring sheet resistance, Hall mobility, and carrier concentration over a span of three weeks. Water contact angle measurements on the hydrogenated diamond surfaces were collected to assess the presence of hydrogen and map the desorption of the hydrogen layer over time. A planar MOSFET fabrication process flow using hydrogenated single-crystal diamond was designed using the information collected.

Type of Resource

text

Language

eng

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